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Effects of coil surface current density on plasma characteristics in a PECVD chamber
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Jiangjie Zeng, Jiangsu Normal University
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Metal Gate inline Vt Variation Improvement for Advanced Technology
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Canyang Xu, Applied Materials
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Aluminum Gap Fill Improvement For 28 HKMG Process
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Shihao Wang, Shanghai Huali Integrated Circuit Corporation
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AMAT High Throughput HDPCVD Ultima XT Introduction
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Tengfei Zhang, Applied Materials China
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Research on the oxidation behavior of Titanium nitride thin films and Resistance simulation
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Xiaotong Zhang, Shanghai Huali Integrated Circuit Corporation
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Improvement of Aluminum Diffusion In HKMG Process
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Xiaoyang Xi, Shanghai Huali Integrated Circuit Corporation
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HIGH-K ELECTRICS HFO2 DEPOSITION EFFECT ON SI-SUB OXIDATION BEHAVIOR
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Junjun chen, Shanghai Huali Integrated Circuit Corporation
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RESEARCH ON THE BACKSIDE PRESSURE OF TANTALUM OXIDE ANTI-REFLECTIVE LAYER IN BSI
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Shenzhou Lu, Shanghai Huali Microelectronics Corporation
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ALUMINUM NITRIDE BASED ETCH STOP LAYER TO ELIMINATE ILD OVER-ETCH ISSUES IN LOGIC BEOL VIA PATTERNING
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Jiang Yu, Lam Research
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INVESTIGATION OF 14 NM CONTACT TUNGSTEN GAP-FILLING PERFORMANCE
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Xiaofang Wang, Shanghai Huali Integrated Circuit Corporation
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Improve SADP/SAQP ALD SIN spacer uniformity by patterned dummy
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Xin Xu, Shanghai IC R&D Center
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Decoupled-plasma Oxidation Process to Improve ALD Oxide Film Quality as IO Device Gate Oxide
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Xin Xu, Shanghai IC R&D Center
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Influence of Material Manufacturing Method on the Growth of Aluminum Fluoride on Heater surface in Plasma Enhanced Chemical Vapor Deposition
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Xiaochen Wang, Piotech Inc.
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The influence of O3/TEOS and He/TEOS flow ratio on gap filling of shallow trench isolation filled with silicon oxide in sub-atmospheric chemical vapor deposition
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Zhenjie Liu, Piotech Inc.
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A Novel Approach to Achieve Extreme Low Vt for NMOS in Advanced FinFET
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Subo Cao, Applied Materials
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Study on the adhesion between amorphous silicon thin films prepared by PECVD and precondition silicon oxide
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Huailei Shi, Piotech Inc.
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Impact of SiOx Substrate on PECVD Amorphous Silicon Film Edge Peeling Defect
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Cherry Xu, Lam Research
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Effects of stacked Al2O3 / HfO2 films deposited in Deep Trench Isolation on White Pixels Noise
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Qixin Wu, Semiconductor Manufacturing International Corporation
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Uniformity optimization and defect reduction of Precision TEOS process
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Junmei Li, Applied Materials
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Thick Epi Process Development on CENTURA ATM Epi System
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Xingxing Liu, Applied Materials
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Applied Materials® Impulse PVD SiN for DRAM Bitline Rs Reduction
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Jiachuan Wu, Applied Materials
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Review and Thermo-fluids Numerical Modeling on Electrostatic Chuck
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Peng Feng, Piotech
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EPI JIT function balance wafer process parameter
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Junyi Hu, Applied Materials
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HARP Liner Penetration in Planar NAND Production
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Songtao Lv, Applied Materials
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Property and profile fine tune in an ICEFill tungsten deposition process
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Kevin Tian, Lam Research
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LHPC Contribution to Oxide Thickness
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Yuning Song, Applied Materials
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Advanced carbon hardmask for 3D NAND: challenges and solutions
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Pengyi Zhang, Lam research
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Adaptive Preheat Application on RPO Process
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Zhipeng Luo, Applied Materials
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FILM PROPERTY ANALYSIS BY FTIR ON ULK FILM DEPOSITION AND UV CURING PROCESS
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Xinchen Cai, Piotech Technology Co., LTD.
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Inhibition-Control-Enhancement Fill (ICEFill™) Dielectric PEALD for HAR Structure Gap Fill
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Xin Liu, Lam Research
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Analysis of Influence to Gate stack of EEPROM Using Cl doped Re-Oxidation
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Hong Zhang, School of Microelectronics, Fudan University, Shanghai
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TiSi Anneal Process Improvement in Advanced CMOS Technology
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Qi Zhang, Applied Materials (China)
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Optimization of Defect and range for Thick TEOS Oxide Deposition in 3D NAND Application
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Chujia Huang, Applied Materials (China), Inc.
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Excellent Copper Gap Fill Performance of AMAT Amber Cu
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Zhen Chen, Applied Materials (China), Inc. China
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The effect of STI divot on planner logic device performance study
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Zhenchao Sui, Semiconductor Manufacturing North China (Beijing) Corporation
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Solution and Mechanism for Producer GT TEOS WER Mismatch
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Aoju Li, Applied Materials
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Solution for Solving the Silane Chamber RPS Path Powder
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Haipeng Chen, Applied Materials
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Dynamic Planarity Control for Auto and Independent Hot Leveling
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Haipeng Chen, Applied Materials
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Range improvement in staircase application in 3D NAND
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Zaigong Wen, Applied Materials (China), Inc.
|
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E-chuck implement in APF for 3D NAND application
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Wentao Ye, Applied Materials
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ESC Application on Producer GT CVD System for High Bow Wafer Handling
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Guowei Zhang, Applied Materials
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300mm Wafer Laser Anneal Process Development for Applications of Multiple Process Condition in Different Zones on Single Wafer
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Xiaoxu Kang, Shanghai ICR&D Center
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Conformal Si STI Liner Epitaxy for Advanced DRAM
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Shiming Liu, Applied Materials
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Void Free Process Development for Node Contact Gap Fill in DRAM
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Guangyao Shen, Applied Materials
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I/O ALD Gate-Ox with Plasma Treatment in Advanced Node
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Gengwu Ji, Applied Materials China
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Post Deposition Purge Optimization for PECVD Process Robustness in Advanced Node
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Chunyuan Zhou, Lam Research
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A Strategy of Eliminating Salicide Block Film Bubbles
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Chao Bao, Huahong Semiconductor (WUXI) Limited
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An Achievement of Low Resistance Non-salicide CT on Active Area
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Bingquan Wang, SMIC
|
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TaN Based Metal-Insulator-Metal Capacitor with Excellent Long-termReliability
|
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Linlin Zhang, Huahong Semiconductor
|
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A Strategy of Eliminating Silicon Dislocation in 55nm Node Technology
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Chao Bao, Huahong Semiconductor (WUXI) Limited
|
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12-inch 90-nm BCD Process Optimization Reducing Wafer Edge LDMOS Leakage
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Guangyuan Lu, Huahong Semiconductor
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