| ** | to designate keynote talk | Sponsored by: |
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| * | to designate invite talk | ||
| to designate regular talk |
Session I: CMP
Session Chair: Xinping Qu
| Opening Remarks |
| Xinping Qu |
| *Closing the Loop: CMP Process Control Methodology and Implementation |
| Brian Brown, Applied Materials |
| *What CMP can do for Waferbonding? |
| Knut Gottfried, Fraunhofer-Institute for Elektronic Nanosystems ENAS |
Session II: Post CMP cleaning
Session Chair: Yuchun Wang
| *Characterization of Ceria and Silica Particle Loading on Post CMP Cleaning |
| Jin-Goo Park, Hanyang University |
| *Development of Post CMP Cleaning Chemistry |
| Cass Shang, GrandiT Co. Ltd. |
| *Challenges and Solutions for Post-CMP Cleaning at Device and Interconnect Levels |
| Jihoon Seo, Clarkson University |
| Nano-ceria particles cleaning by HNO3-H2O2-DIW solution at room temperature |
| Yingjie Wang, Fudan University |
Session III: FRONT END CMP
Session Chair: Shoutian Li
| *Development of CMP Head-to-Head Compensation Function for Gate Height Uniformity Control |
| Yurong Que, Shanghai Huali Integrated Circuit Corporation |
| Several Strategies for Al Metal Gate Chemical Mechanical Planarization Scratch Reduction |
| Qingxuan Hong, Shanghai Huali Integrated Circuit Corporation |
| Mark Damage Phenomenon Caused by Superimposed CMP Dishing on Large-Area STI Regions |
| WenSheng Xu, Shanghai Huali Microelectronics Corporation |
Session IV: DIELECTIC and COMPOUND CMP
Session Chair: Baoguo Zhang
| *Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica based Alkaline Slurry |
| Chenwei Wang, Hebei University of Technology |
| Component Optimization of Sapphire Slurry based on Response Surface Methodology for Chemical Mechanical Polishing |
| Minghui Qu, Hebei University of Technology |
Session V: METAL CMP
Session Chair: Jingxun Fang
| *W CMP slurries |
| Chun Lu, Merck |
| *Defect Law of Cu/Co Pattern Wafers After Using A Novel Bulk/Barrier Slurry and Cleaning Solution |
| Lifei Zhang, Tsinghua University |
| IMPROVEMENT OF CU-CMP ENDPOINT CURVES FOR DIFFERENT PATTERN DENSITY |
| Yi Xian, Shanghai Huali Integrated Circuit Corporation |
| Effect of TAZ as inhibitor on CMP process of molybdenum |
| Pengfei Wu, Hebei University of Technology |
| Effect of OA and JFCE as Surfactants on the Stability of Copper Interconnection CMP Slurry |
| Yan Han, Hebei University of Technology |
| Effect of different complexing agents on chemical mechanical polishing of copper film |
| Fu Luo, Hebei University of Technology |
| Improvement of sensitivity of eddy current thickness sensors with ferrite core for CMP process |
| Chengxin Wang, Tsinghua University |
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Poster Session:
| Dishing improve in Advanced Technology Nodes |
| Yu Yang, Shanghai Huali Integrated Circuit Corporation |
| An optimized method for Cu CMP dishing improvement |
| Lei Zhang, Shanghai Huali Integrated Circuit Corporation |
| Study on the correlation between CMP Cu Loading and Edp curve |
| Yuanyuan Meng, Shanghai Huali Integrated Circuit Corporation |
| Tungsten CMP Consumable Localization study at 28nm Technology Node |
| Shaojia Zhu, Shanghai Huali Integrated Circuit Corporation |
| An optimized monitoring method for 28HK ILDCMP |
| Jingjing Li, Shanghai Huali Integrated Circuit Corporation |
| SIN Residue Improvement of ILD0CMP at 28nm Technology Node |
| Yurong Que, Shanghai Huali Integrated Circuit Corporation |
| CMP Scratch improve in Advanced Technology Nodes |
| Weiran Sun, Shanghai Huali Integrated Circuit Corporation |
| STUDY ON HIGH STRESS SENSITIVITY OF COBALT "BULK CMP" |
| Yuanshen Cheng, Hebei University of Technology |
| Dielectric CMP WIW Uniformity Control by FullVision MPC |
| Ran Yin, Applied Materials |
| CleanStart Arm in CMP process for CoC reduction |
| Yifeng Zheng, Applied Materials |
| WiW iAPC Successful Application in Post CMP Range Control |
| Kun Zhang, Applied Materials |
| AMAT PreClean for Ceria CMP Defectivity and Productivity Improvement |
| Na Xiao, Applied Materials |
| Twinning phenomenon and analysis of InP crystal growth |
| Yanlei Shi, 13th Research Institute of CETC |
| RR Profile Trend Worse Issue Improved Through HPPC Function |
| Huijun Zhang, Applied Materials China |
| Study on Preparation and Polishing Performance of Ceria slurry |
| Ye Wang, Hebei University of Technology |
| Study on Corrosion of Titanium Nitride Corrosion during Chemical Mechanical Polishing in H2O2 Based Slurry |
| Feng Guo, Hebei University of Technology |
| CMP PreClean Module for High Particle Removal efficiency clean |
| Pingyuan Lu, Applied Materials |
| Preclean Module for Nano Particle Reduction in Post CMP |
| Yongbin Wei, Applied Materials |
| The research on synthesis temperature and solidification ways of InP polycrystal |
| Lijie Fu, The 13th Research Institute, CETC |
| The Effect of Pentapotassium Diethylenetriaminepentaacetate on the Removal Rate Selectivity of Cu/Ru/TEOS During CMP |
| Huiping Ma, Hebei University of Technolog |
| Tool Uptime Improvement and CoC Reduction by HPPC Function |
| Shaopeng Zhang, Applied Materials |
| Effect of Process Conditions on the Dishing and Erosion Correction on Copper Barrier CMP |
| Xinying Zhang, Hebei University of Technology |
| Low Pressure Rinse Improve the Defect of Cu Layers |
| Yunlong Wu, Applied Materials |