|
Dr. R. Zhang graduated from the Department of Electrical Engineering, The University of Tokyo in 2012. Dr. R. Zhang is engaged in the development of semiconductor device technologies, including: 1, Fabrication techniques of high performance Ge MOSFETs; 2, Carrier scattering and transport mechanisms in Ge channels; 3, Integration of Ge channels on Si platform. Based on these researches, the applicant has published more than 100 peer-reviewed papers in academic journals and conferences with SCI citation of 1708 and H-index of 20. Among them, the applicant has published 4 IEEE IEDM papers, 3 IEEE VLSI Symposia papers and 8 IEEE TED papers as the first author. The researches of applicant have been selected by IEEE IEDM and IEEE VLSI Symposia as highlights, and reported by and . The applicant is honor by 2013 IEEE Paul Rappaport Award for the contribution on Ge devices. The applicant has also been honored by Best Paper Award of Japan Society of Applied Physics (Si technology division), Dean Award of School of Engineering (The University of Tokyo), Student Award of IEEE Electron Device Society (Japan division, 2012 and 2011), Best Paper Award of IEEE VLSI Symposia (2012).
|
