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English
March 14-16,2018
Shanghai New International Expo Centre

Christian Schmid

Christian Schmid
Project Manager Frontend Technology, Osram Opto Semiconductors

Biography

Christian Schmid worked in the semiconductor industry for over 20 years with responsibilities ranging from equipment engineering to technology development in Silicon and III/V fabs. Focus topics of his work were process development of epitaxy processes, as well as plasma-based deposition and annealing processes. He is currently responsible for technology development of temporary carrier systems at Osram Opto Semiconductors, where he is in charge for developing process modules to allow handling of thin and flexible wafers with high bow. Christian holds an Engineering and a Master Degree in Electrical Engineering of the University Hagen, Germany.

Abstract

Gallium Nitride Lasers from a Manufacturing Perspective
Dipl.-Ing. Christian Schmid, M. Sc
Osram Opto Semiconductors, Leibnizstrasse 4, 93055 Regensburg, Germany.
Gallium nitride, a direct bandgap semiconductor widely used in bright light emitting diodes and laser diodes, has revolutionized the solid state lighting market. Starting from Pankove [1], who demonstrated in 1971 the first blue GaN metal-insulator semiconductor LED, GaN has been the subject of many researchers. Besides the pathbreaking work of the groups of Akasaki [2] and Nakamura [3] the scientific results of many groups all over the world led to todays high efficiency light sources [4] [5]. In this talk we will introduce Osram Opto Semiconductors, the worlds second largest manufacturer of optoelectronic semiconductors, followed by some examples for applications of laser diodes made of GaN. After discussing the fundamentals of laser diodes we will draw a bow to the challenges in manufacturing of GaN laser diodes in a high volume LED chip fab.

References
[1]   Pankove J I, Miller E A, Richman D and Berkeyheiser J E (1971) Electroluminescence in GaN. J. Lumin. 4, 63
[2]   Amano H, Kito M, Hiramatsu K, Akasaki I (1989) P-type conduction in Mgdoped GaN treated with low-energy Electron Beam Irradiation (LEEBI). Jpn. J. Appl. Phys. 28
[3]   Nakamura S, Senoh M, Mukai T (1991) Highly p-typed Mg-doped GaN films grown with GaN Buffer Layers. Jpn. J. Appl. Phys. 30
[4]   Strauss et al (2014) Recent advances in c-plane GaN visible lasers. Proc SPIE8986, Gallium Nitride Materials and Devices IX, 89861L
[5]   Loeffler et al (2015) InGaN Power Laser Chips in a Novel 50W Multi-Die Package. Proc SPIE9363, Gallium Nitride Materials and Devices X, 936318