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+86.21.6027.8500
English
March 14-16,2018
Shanghai New International Expo Centre

Wayne Johnson

Wayne Johnson
Vice President & Head of Power Business Unit, IQE

Biography

Dr. Johnson has been involved in the research, development, and commercialization of Gallium Nitride devices for 20 years. Dr. Johnson received the BChE degree from Georgia Tech and Ph.D. degree from the University of Florida, both in Chemical Engineering. Dr. Johnson previously worked at Nitronex Corporation where he helped develop and release the world’s first commercial GaN-on-Si power transistors. He later led the III-V Technology group for Kopin Corporation. In Dr. Johnson’s current role as Head of IQE’s Power Business Unit, he is responsible for all GaN-based products for the world’s leading provider of advanced compound semiconductor wafers. Dr. Johnson has co-authored 2 book chapters, >200 journal articles and conference presentations, and 15 U.S. patents, with a majority of these in the field of GaN electronics.

Astract

The past 10-15 years have been extremely important for GaN-based materials employed in electronic device applications. During this time, crystal quality, transport properties, and uniformity of GaN epitaxial layers deposited on SiC substrates were major areas of focus. Today, GaN-on-SiC HEMTs have reached a level of maturity enabling production volumes across a wide range of RF, wireless, and military applications.

Recently, a renewed focus on GaN-based materials and device development has been led by the promise of GaN-on-Si. The burgeoning interest in GaN-on-Si is largely driven by the desire to incorporate GaN into power electronics systems. The GaN-on-Si approach enables realization of GaN performance in a cost-effective platform scalable to 200mm wafer size and beyond. A primary impediment to practical realization of GaN-on-Si HEMT products is the current lack of widespread commercial availability of high quality, low background concentration, thick GaN epilayers formed on Si substrates. The landscape is quickly changing, however, with advances in epitaxial growth techniques as well as novel materials solutions.

This presentation will review options for GaN-based HEMTs, with an emphasis on available application-specific materials choices. For GaN-on-SiC, this will include current production status and brief description of next-generation InAlN-based materials. For GaN-on-Si, MOCVD growth techniques and layer schemes optimized for power electronics applications will be demonstrated and discussed.