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Wayne Johnson Vice President, IQE |
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Biography Dr. Johnson has been involved in the research, development, and commercialization of compound semiconductor materials and devices for >20 years. Early in his career, Dr. Johnson helped develop and launch the world’s first GaN-on-Si power transistors. He later led the III-V Technology group for Kopin Corporation. In Dr. Johnson’s current role at IQE, he is responsible for emerging opportunities across a wide range of compound semiconductor applications. Dr. Johnson has co-authored 2 book chapters, >200 journal articles and conference presentations, and holds 19 U.S. patents. Abstract Macrotrends in connectivity, sensing, and energy are fueling unprecedented demand for compound semiconductors (CS). In these areas, the performance advantages of CS-enabled devices are being leveraged to fundamentally shape or alter industry directions. 5G connectivity will not be a simple evolution from 4G. Rather, it is poised to become the foundation for a globally connected ecosystem of people, devices, and infrastructure. In sensing, innovative gesture recognition technology has already reached ubiquitous status in latest-generation handsets but promises a much broader reach into transportation, medicine, safety/security, and many other fields. And in energy, the need for more efficient use of electricity is as pervasive as the proliferation of power-consuming devices themselves. Such markets are key growth drivers for devices based on GaAs, InP, GaN, and other CS materials. This presentation will review the status, key applications, and future directions in connectivity, sensing, and energy markets and relate them directly to the relevant underlying, enabling CS materials. |
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