Eddy Simoen
Senior Researcher
IMEC, Belgium


Eddy Simoen was born in Torhout (Belgium) on March 3 1957. He obtained his Bachelor (1976-78) and Master Degree in Physics Engineering (1978-'80) and the Doctoral Degree in Engineering ('85) from the University of Gent (Belgium). His doctoral thesis was devoted to the study of trap levels in high-purity germanium by deep-level transient spectroscopy. In 1986, he joined imec to work in the field of low temperature electronics. His current interests cover the field of device physics and defect engineering in general, with particular emphasis on the study of low-frequency noise, low-temperature behavior and of radiation defects in semiconductor components and materials. He is an Imec Senior Researcher, currently involved in the study of defect and strain engineering in high-mobility and epitaxial substrates and defect studies in germanium and III-V compounds (AlN; GaN, InP...). Another current focus point is the study of 1-transistor memories based on bulk FinFET and Ultra-thin Buried Oxide (UTBOX) Silicon-on-Insulator (SOI), using low-frequency noise. In 2013, he was nominated part-time Professor at the Ghent University in the field of the study on the impact of defects on semiconductor devices. In 2016 he became a Fellow of the Electrochemical Society. Since November of 2016 he is the Chair of the IEEE EDS Chapter Benelux.

In these fields, he has (co-) authored over 1600 Journal and Conference papers and in addition 12 book chapters and a monograph on Radiation Effects in Advanced Semiconductor Devices and Materials (Springer, 2002) whereof the Chinese translation has been published in March 2008. He was also a co-editor of the book on Germanium-based Technologies - from Materials to Devices (Elsevier March 2007; Chinese translation 2010). Another book on the “Fundamental and Technological Aspects of Extended Defects in Germanium” has been published by Springer in January 2009. A monograph on Random Telegraph Signals in Semiconductor Devices has been published in October 2016 by the Institute of Physics. He is also a co-inventor of two patents.

He acted as co-editor of four International Conference Proceedings and was a lecturer at the International Noise School held at Imec in 1993, at the ENDEASD Workshop in Santorini (Greece; april 1999) and Stockholm (Sweden, June 2000) and at the EUROSOI Workshop in Leuven (January, 2007). He is the lead organizer of the biannual High Purity Silicon Symposium at ECS Fall meetings and organized a NANOSIL Workshop on high-mobility substrates in Strasbourg (2009) and Glasgow (2010). Finally, he acted as a co-organizer of the 2014 Doctoral Summer School on Defects in Semiconductors at the Ghent University.