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June 27-29, 2020
Shanghai New International Expo Centre

Memory Strategic Forum

Memory Strategic Forum

Date: Monday, June 29, 2020
Time: 09:00-12:00
Venue: Pudong Ballroom 1+2+3, Kerry Hotel Pudong, Shanghai
Chinese and English Simultaneous Interpretation will be provided

Attendee Registration   Previous Review

For Memory business, 2019 is a year of significant. According to IC Insight, capital investment will reduce 8% from $105.9 billion in 2018 to $97.8 billion in 2019. In the contrary, technology evolution is speeding up. Mainstream DRAM density goes up to 16Gb per chip on 1Znm process, SK Hynix announced 128 layers 4D NAND paired with its Periphery Under Cell (PUC) technology.

China Memory industry is forging quickly. YMTC launched production of 64 layers 3D NAND on Xtacking technology, Unigroup announced it's DRAM strategy, Innotron started the production of 8Gb DDR4.

In the era of Big Data, AI and IOT, explosive needs of low-power computing demands Memory innovations. 3D packaging, MRAM, PCRAM and RERAM move toward maturity, in-Memory computing is an emerging concept.

Let us meet again in SEMICON CHINA 2020!

Organizer:  

Platinum Sponsors:  

Gold Sponsor:  

Agenda / 议程
   
08:45-09:15 Registration 来宾登记
   
Moderator / 嘉宾主持
Andrew Peng 彭安
Vice President, Business Development, SPIN MEMORY; Deputy to JEDEC Chairman
副总裁,业务发展,SPIN MEMORY;JEDEC副主席
   
09:20-09:45 DRAMeXchange 集邦科技
   
09:45-10:10
Dr. Peijun Ding 丁培军博士
President, NAURA
北方华创,总裁
   
10:10-10:35
Dr. Alex Wang 王其国
President, Powerchip Technology Corporation
力晶科技股份有限公司,总经理
   
10:35-11:00 TBD
   
11:00-11:25
Dr. PAN Yang
Corporate Vice President, Advanced Technology Development, Lam Research
   
11:25-11:40 TBD
   
11:40-12:05
Manufacturing Technology of Phase Change Memory (PcRAM) for a New Computing Era
Koukou Suu 邹弘纲
Executive Officer, ULVAC, Inc.
株式会社ULVAC, 执行董事
   
* Agenda is subject to change
* 议程变化恕不另行通知