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SangBum Kim is an Associate Professor in the Department of Materials Science and Engineering, Seoul National University. From 2010 to 2018, he was with the IBM T.J. Watson Research Center.
At IBM, he worked on phase change memory devices for various memory applications such as storage-class memory, embedded memory, and brain-inspired neuromorphic computing.
He received the B.S. degree from Seoul National University, Seoul, Korea, in 2001 and the M.S. and Ph.D. degrees from Stanford University, Stanford, CA, in 2005 and 2010, respectively, all in electrical engineering. His Ph.D. dissertation focused on the scalability and reliability of phase change memory (PCM).
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