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+86.21.6027.8500
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March 14-16,2018
Shanghai New International Expo Centre

Power & Compound Semiconductor Forum

Power & Compound Semiconductor Forum    
Date: March 15-16, 2017  
Venue: Pudong Ballroom 4, Kerry Hotel Pudong, Shanghai  
Chinese and English Simultaneous Interpretation will be provided  

Attendee Registration  Previous Review
Important Notice: This is a two-day conference. You can attend two-day conference when you choose any of them.

From the first generation of semiconductors produced on silicon wafers to the next generation of semiconductors produced on GaAs wafers, the industry is now ramping up and investing in a third generation of semiconductors based on SiC and GaN-based wafer technologies. These Wide Band Gap (WBG) materials will have an increasing effect on society and technology for both power and compound semiconductor device applications. These applications include semiconductor lighting, laser, display, mobile communications, consumer electronics, green energy, modern transportation, and others that will impact and improve many aspects of society.

To meet the industry’s demand for critical insight and information for these emerging trends, SEMI China has combined two previously separate events, to create the comprehensive Power and Compound Semiconductor Forum. This forum, held in conjunction with SEMICON China 2017, will have four sessions: LED & Optoelectronics, Wide Band Gap Power Electronics, Compound Semiconductor in Communications, and Emerging Power Device Technology.

Result for "Power & Compound Semiconductor Forum 2017" Attendee Survey
“功率及化合物半导体论坛2017”观众调查表评选结果
 
Best Speaker  最佳讲师
Wayne Johnson
 
Excellent Speakers  优秀讲师
1. Charles Li
2. Charles Bailley
3. Arnost Kopta
 
Lucky Attendees  幸运观众
孙*,北京大学
张*宾,Transphorm
张*,创芯科技
李*民,华为技术
付*,苏州纳米所
 

 
 

 
 

 
 
 

Day1-Mar.15, 2017

*Session 1: LED & Optoelectronics ( Previously known LED China Conference)

As the premium LED technology conference in China, the LED China Conference is now a key component of the Power & Compound Semiconductor Forum. Hot topics to be covered in this session include UV LED, Laser LED, Micro-LED, Sapphire trends, M&A activity in the global LED industry, and more.

08:30-09:15 Registration  注册
   
Session 1 Moderator / 主持人:
Daniel Tracy
Senior Director of IRS, SEMI
 
09:15-09:20 Welcome Remark  欢迎致辞
   
09:20-09:50 Keynote Speech  主旨演讲
Status and Development Trend of GaN-on-Si LED Industry Chain
硅衬底LED产业链现状和发展方向

Min Wang  王敏
CEO, Lattice Power Corporation
晶能光电首席执行官
   
09:50-10:15
Gallium Nitride Lasers from a Manufacturing Perspective
从制造角度看氮化镓激光
Christian Schmid
Project Manager, Osram Opto Semiconductors

欧司朗光电半导体,前端技术项目经理
 
10:15-10:40
The Development of Next Generation PixeLED Display Technology
次世代显示技术PixeLED的发展
Charles LI  李允立
CEO, PlayNitride
錼創科技,首席执行官
   
10:40-11:05
Design and evaluation of optical lens for PSS AOI System
用于PSS AOI的光学镜头的设计及评估
Aris MA  马铁中
CEO, AK OPTICS
昂坤视觉(北京)科技有限公司,首席执行官
   
11:05-11:30
Recent progress and future prospects on Bulk AlN crystal growth for Deep UV-LED applications
深紫外LED氮化铝衬底单晶生长技术最新进展及未来面临的挑战
Liang WU  吴亮
Chief Engineer, GCL
协鑫,首席工程师
   
11:30-12:00
Market and Research Trends for High Efficiency GaN based LEDs
高效率氮化物LED芯片市场及技术发展趋势
Jiangbo Wang  王江波
Vice President, HC SemiTek Corporation
华灿光电股份有限公司,副总裁
   
12:00-13:30 Break
休息
   

*Session 2: Wide Band Gap Power Electronics

As representatives of WBG materials, both GaN and SiC have advantages in emerging device applications due to high saturated electron drift velocity, low dielectric constants, and high conductivities. The market potential for these material technologies is high in the application of power electronics given advantages of anti-radiation, high-frequency, high power, and high density integration.

Leading innovative companies in the WBG segment of semiconductor industry supply chain will present cutting-edge technology and the latest trends in power electronics applications.

Session 2 Moderator / 主持人:
David Xiao  肖国伟
CEO of APT Electronics, Co-Chair of SEMI China LED Advisory Committee
SEMI中国LED顾问委员会Co-Chair,广东晶科电子股份有限公司,CEO
 
13:30-14:00
GaN on Si – a truly revolutionary semiconductor technology matures
硅基氮化镓-一个正在走向成熟的颠覆性半导体技术
Dr. Markus Behet
Chief Marketing Officer, EpiGaN
 
14:00-14:30
Further advances in GaN and SiC epitaxial production technologies for efficient power semiconductor devices
用于高效电力电子半导体器件的GaN和SiC外延生产技术的进一步发展

Dr. Frank Wischmeyer
Vice President Power Electronics, AIXTRON SE
德国爱思强股份有限公司,电力电子器件副总裁
   
14:30-15:00
Expectation for WBG power devices
对宽禁带功率器件的期望
Masakatsu Hoshi
Senior Engineer, Nissan Motor Co., Ltd
日产汽车,高级工程师
   
15:00-15:30
The application of high density ICP etch equipment in new power devices manufacture
高密度ICP刻蚀机在新型功率器件制造中的应用

Yang Meng  杨盟
Product Director and Deputy GM of Etch Product Division, Beijing NAURA Microelectronics Equipment Co., Ltd.
北京北方华创微电子装备有限公司,刻蚀事业部副总经理
   
15:30-16:00
Efforts towards GaN power FETs in Sinopower Semiconductor
华功半导体GaN功率电子器件的产业化进程

Yang Liu  刘扬
Vice president, SINOPOWER SEMICONDUCTOR CO.,LTD.
江苏华功半导体有限公司,技术副总裁
   
16:00-16:30
Power & RF Electronics commercialization through MOCVD advancements from Single Wafer Reactor technology
单片MOCVD技术发展推动功率&微波电子器件的商业化

Somit Joshi
Sr. Director of Marketing in Veeco
   
16:30-17:00
GaN E-HEMT for the next era of power conversion
用于下一代电源转换的GaN E-HEMT
Charles Bailley
Senior Director, Asia, Sales, Mktg, & Apps, GaN Systems Inc.
   

Day2-Mar.16, 2017

*Session 3:  Compound  Semiconductor in Communications

With the surge in intelligent mobile electronics across the global market over the past number of years, the compound semiconductor market has experienced accelerated growth. Over this timeframe, compound semiconductor companies have experienced rapid revenue growth. Chinese enterprises, however, have missed out on dividend growth in this growth market, so new strategies and incentives are urgently needed to further develop the local China supply chain in this ever important industry segment. 

Opportunities for GaAs, GaN and other compound semiconductor technologies include wireless networking, satellite navigation, automotive electronics, and IoT applications, all of which will be discussed in this session.


Session 3 Moderator / 主持人:
Naiqian Zhang  张乃千
President, Dynax Semicondutor, Inc.
苏州能讯高能半导体有限公司,总裁
 
09:25-09:30
Welcome Remark  欢迎致辞
Lung Chu  居龙
President of SEMI China
SEMI中国区总裁、SEMI全球副总裁
 
09:30-09:55
High volume 6”GaN/SiC HEMT technology for wireless communication applications
无线通讯用六寸氮化镓HEMT量产技术

Tim Yeh  叶念慈
Director, GaN TD Division, SANAN IC
三安集成电路,氮化镓技术开发处副总监
 
09:55-10:20
Development of high efficient and high reliable GaN RF Device for Mobile Application
应用于移动通讯的高效高可靠氮化镓射频器件开发
Yi Pei  裴轶
Director of Device Technology, Dynax Semiconductor
能讯高能半导体,器件技术总监
   
10:20-10:45
Pure Play GaN HEMT 0.45/0.25-um Technology Development for Wireless Application
稳懋半导体0.45/0.25 微米氮化鎵高速电子元件之发展
C.K. Lin  林正国
Director, WIN Semiconductors Corp.
稳懋半导体股份有限公司,总监
   
10:45-11:10
GaAs and GaN based device optimization by advanced epitaxial growth analysis
用于优化砷化镓、氮化镓器件的外延生长分析技术
Tom Thieme
Director Marketing and Sales, LayTec AG
   
11:10-11:35
SiGe BiCMOS Process Technologies for Wireless Applications
SiGe BiCMOS工艺技术的无线应用
Edward Preisler
Towerjazz
   
11:35-12:00
A Multipurpose Millimeter Wave High Power and Low Noise GaN/Si Process for High Frequency Transmit-Receive MMICs
LEBLANC Remy
Director, Product Development, OMMIC
   
12:00-13:30 Break
休息
   
13:30-14:00
GaN and Related Materials for RF and Power Electronics Applications
氮化镓和相关材料的射频和电力电子应用
Wayne Johnson
Vice President & Head of Power Business Unit, IQE
 

*Session 4: Emerging Power Device Technology

Power semiconductors are rapidly developing towards higher power, improved gate driver performance, and higher frequency applications. Through innovation of IGBT, MCT, IEGT, SiC and MOSFET device technologies, higher requirements are needed on the materials and the semiconductor manufacturing process.

It will be a challenge to Chinese enterprises to seize domestic market opportunities and close the gap between foreign incumbents, such as Infineon, ABB, Rohm, and Toshiba. In this session, topics covered will include integration design, manufacturing, packaging, and end-market applications to explore industry opportunities and challenges.

Session 4 Moderator / 主持人:
Jiye Yang  杨继业
Senior director, TD Integration Division I, HHGrace
华虹宏力集成一部总监
 
14:00-14:30
Device and packaging technologies for demanding high power applications
高功率应用对器件和封装技术的要求
Arnost Kopta
Head of BiMOS R&D, ABB Switzerland Ltd, Semiconductors
   
14:30-15:00
Status of Development and Mass Production for SiC Power Device
碳化硅功率器件的发展和大规模生产的现状
Hiroshi Kanazawa  金泽博
Marketing Unit Manager, Showa Denko K.K.
昭和电工
   
15:00-15:30
The Future of Power Devices and Implications for Semi Equipment
功率器件的未来和半导体制造设备的启示
Durga Chaturvedula
Managing Director, 200mm Product Mgmt. & Technology, Applied Materials
   
15:30-16:00
Demand, Status and Development Trend for Power Electronic Device
电力系统电力电子器件需求、现状及发展趋势
Yufeng Qiu  邱宇峰
Vice president, Global Energy Interconnection Research Institute
全球能源互联网研究院,副院长
   
16:00-16:30
Thin Film Processes for Si, SiC and GaN Power Devices
硅、碳化硅和氮化镓功率器件的薄膜工艺
Hans Auer
Senior Product Marketing Manager, Evatec
   
16:30-17:00
Closing Keynote  闭幕演讲
Research of Power Semiconductor Devices with Novel Structures
新型结构晶体管及新一代功率芯片的研究
Pengfei Wang  王鹏飞
CTO, Oriental Semiconductor
东微半导体,首席技术官
   

Two-day registration fee:
Type Before Feb.20 with Advanced Payment(Early Bird) After Feb.20 and On-site
Attendees RMB 1,000 per person RMB 1,500 per person
Speakers Free Free
*Lunch is not included
*Agenda is subject to change

Developed From 

For more information and sponsorship, please contact:
Daniel Qi
Chief Analyst | Industry Research and Consulting
Director | Power and Compound Semiconductor Industry
Tel: 86-21-60278576
Email: fqi@semi.org


Sophia Huang
Program Specialist
Tel:86-21-60278553
Email: shuang@semi.org

Power & Compound Semiconductor Forum    
Date: March 15-16, 2017  
Venue: Pudong Ballroom 4, Kerry Hotel Pudong, Shanghai  
Chinese and English Simultaneous Interpretation will be provided  

Attendee Registration  Previous Review
Important Notice: This is a two-day conference. You can attend two-day conference when you choose any of them.

From the first generation of semiconductors produced on silicon wafers to the next generation of semiconductors produced on GaAs wafers, the industry is now ramping up and investing in a third generation of semiconductors based on SiC and GaN-based wafer technologies. These Wide Band Gap (WBG) materials will have an increasing effect on society and technology for both power and compound semiconductor device applications. These applications include semiconductor lighting, laser, display, mobile communications, consumer electronics, green energy, modern transportation, and others that will impact and improve many aspects of society.

To meet the industry’s demand for critical insight and information for these emerging trends, SEMI China has combined two previously separate events, to create the comprehensive Power and Compound Semiconductor Forum. This forum, held in conjunction with SEMICON China 2017, will have four sessions: LED & Optoelectronics, Wide Band Gap Power Electronics, Compound Semiconductor in Communications, and Emerging Power Device Technology.

 
Result for "Power & Compound Semiconductor Forum 2017" Attendee Survey
“功率及化合物半导体论坛2017”观众调查表评选结果
 
Best Speaker  最佳讲师
Wayne Johnson
 
Excellent Speakers  优秀讲师
1. Charles Li
2. Charles Bailley
3. Arnost Kopta
 
Lucky Attendees  幸运观众
孙*,北京大学
张*宾,Transphorm
张*,创芯科技
李*民,华为技术
付*,苏州纳米所
 

 
 

 
 

 
 
 

Day1-Mar.15, 2017

*Session 1: LED & Optoelectronics ( Previously known LED China Conference)

As the premium LED technology conference in China, the LED China Conference is now a key component of the Power & Compound Semiconductor Forum. Hot topics to be covered in this session include UV LED, Laser LED, Micro-LED, Sapphire trends, M&A activity in the global LED industry, and more.

08:30-09:15 Registration  注册
   
Session 1 Moderator / 主持人:
Daniel Tracy
Senior Director of IRS, SEMI
 
09:15-09:20 Welcome Remark  欢迎致辞
   
09:20-09:50 Keynote Speech  主旨演讲
Status and Development Trend of GaN-on-Si LED Industry Chain
硅衬底LED产业链现状和发展方向

Min Wang  王敏
CEO, Lattice Power Corporation
晶能光电首席执行官
   
09:50-10:15
Gallium Nitride Lasers from a Manufacturing Perspective
从制造角度看氮化镓激光
Christian Schmid
Project Manager, Osram Opto Semiconductors

欧司朗光电半导体,前端技术项目经理
 
10:15-10:40
The Development of Next Generation PixeLED Display Technology
次世代显示技术PixeLED的发展
Charles LI  李允立
CEO, PlayNitride
錼創科技,首席执行官
   
10:40-11:05
Design and evaluation of optical lens for PSS AOI System
用于PSS AOI的光学镜头的设计及评估
Aris MA  马铁中
CEO, AK OPTICS
昂坤视觉(北京)科技有限公司,首席执行官
   
11:05-11:30
Recent progress and future prospects on Bulk AlN crystal growth for Deep UV-LED applications
深紫外LED氮化铝衬底单晶生长技术最新进展及未来面临的挑战
Liang WU  吴亮
Chief Engineer, GCL
协鑫,首席工程师
   
11:30-12:00
Market and Research Trends for High Efficiency GaN based LEDs
高效率氮化物LED芯片市场及技术发展趋势
Jiangbo Wang  王江波
Vice President, HC SemiTek Corporation
华灿光电股份有限公司,副总裁
   
12:00-13:30 Break
休息
   

*Session 2: Wide Band Gap Power Electronics

As representatives of WBG materials, both GaN and SiC have advantages in emerging device applications due to high saturated electron drift velocity, low dielectric constants, and high conductivities. The market potential for these material technologies is high in the application of power electronics given advantages of anti-radiation, high-frequency, high power, and high density integration.

Leading innovative companies in the WBG segment of semiconductor industry supply chain will present cutting-edge technology and the latest trends in power electronics applications.

Session 2 Moderator / 主持人:
David Xiao  肖国伟
CEO of APT Electronics, Co-Chair of SEMI China LED Advisory Committee
SEMI中国LED顾问委员会Co-Chair,广东晶科电子股份有限公司,CEO
 
13:30-14:00
GaN on Si – a truly revolutionary semiconductor technology matures
硅基氮化镓-一个正在走向成熟的颠覆性半导体技术
Dr. Markus Behet
Chief Marketing Officer, EpiGaN
 
14:00-14:30
Further advances in GaN and SiC epitaxial production technologies for efficient power semiconductor devices
用于高效电力电子半导体器件的GaN和SiC外延生产技术的进一步发展

Dr. Frank Wischmeyer
Vice President Power Electronics, AIXTRON SE
德国爱思强股份有限公司,电力电子器件副总裁
   
14:30-15:00
Expectation for WBG power devices
对宽禁带功率器件的期望
Masakatsu Hoshi
Senior Engineer, Nissan Motor Co., Ltd
日产汽车,高级工程师
   
15:00-15:30
The application of high density ICP etch equipment in new power devices manufacture
高密度ICP刻蚀机在新型功率器件制造中的应用

Yang Meng  杨盟
Product Director and Deputy GM of Etch Product Division, Beijing NAURA Microelectronics Equipment Co., Ltd.
北京北方华创微电子装备有限公司,刻蚀事业部副总经理
   
15:30-16:00
Efforts towards GaN power FETs in Sinopower Semiconductor
华功半导体GaN功率电子器件的产业化进程

Yang Liu  刘扬
Vice president, SINOPOWER SEMICONDUCTOR CO.,LTD.
江苏华功半导体有限公司,技术副总裁
   
16:00-16:30
Power & RF Electronics commercialization through MOCVD advancements from Single Wafer Reactor technology
单片MOCVD技术发展推动功率&微波电子器件的商业化

Somit Joshi
Sr. Director of Marketing in Veeco
   
16:30-17:00
GaN E-HEMT for the next era of power conversion
用于下一代电源转换的GaN E-HEMT
Charles Bailley
Senior Director, Asia, Sales, Mktg, & Apps, GaN Systems Inc.
   

Day2-Mar.16, 2017

*Session 3:  Compound  Semiconductor in Communications

With the surge in intelligent mobile electronics across the global market over the past number of years, the compound semiconductor market has experienced accelerated growth. Over this timeframe, compound semiconductor companies have experienced rapid revenue growth. Chinese enterprises, however, have missed out on dividend growth in this growth market, so new strategies and incentives are urgently needed to further develop the local China supply chain in this ever important industry segment. 

Opportunities for GaAs, GaN and other compound semiconductor technologies include wireless networking, satellite navigation, automotive electronics, and IoT applications, all of which will be discussed in this session.


Session 3 Moderator / 主持人:
Naiqian Zhang  张乃千
President, Dynax Semicondutor, Inc.
苏州能讯高能半导体有限公司,总裁
 
09:25-09:30
Welcome Remark  欢迎致辞
Lung Chu  居龙
President of SEMI China
SEMI中国区总裁、SEMI全球副总裁
 
09:30-09:55
High volume 6”GaN/SiC HEMT technology for wireless communication applications
无线通讯用六寸氮化镓HEMT量产技术

Tim Yeh  叶念慈
Director, GaN TD Division, SANAN IC
三安集成电路,氮化镓技术开发处副总监
 
09:55-10:20
Development of high efficient and high reliable GaN RF Device for Mobile Application
应用于移动通讯的高效高可靠氮化镓射频器件开发
Yi Pei  裴轶
Director of Device Technology, Dynax Semiconductor
能讯高能半导体,器件技术总监
   
10:20-10:45
Pure Play GaN HEMT 0.45/0.25-um Technology Development for Wireless Application
稳懋半导体0.45/0.25 微米氮化鎵高速电子元件之发展
C.K. Lin  林正国
Director, WIN Semiconductors Corp.
稳懋半导体股份有限公司,总监
   
10:45-11:10
GaAs and GaN based device optimization by advanced epitaxial growth analysis
用于优化砷化镓、氮化镓器件的外延生长分析技术
Tom Thieme
Director Marketing and Sales, LayTec AG
   
11:10-11:35
SiGe BiCMOS Process Technologies for Wireless Applications
SiGe BiCMOS工艺技术的无线应用
Edward Preisler
Towerjazz
   
11:35-12:00
A Multipurpose Millimeter Wave High Power and Low Noise GaN/Si Process for High Frequency Transmit-Receive MMICs
LEBLANC Remy
Director, Product Development, OMMIC
   
12:00-13:30 Break
休息
   
13:30-14:00
GaN and Related Materials for RF and Power Electronics Applications
氮化镓和相关材料的射频和电力电子应用
Wayne Johnson
Vice President & Head of Power Business Unit, IQE
 

*Session 4: Emerging Power Device Technology

Power semiconductors are rapidly developing towards higher power, improved gate driver performance, and higher frequency applications. Through innovation of IGBT, MCT, IEGT, SiC and MOSFET device technologies, higher requirements are needed on the materials and the semiconductor manufacturing process.

It will be a challenge to Chinese enterprises to seize domestic market opportunities and close the gap between foreign incumbents, such as Infineon, ABB, Rohm, and Toshiba. In this session, topics covered will include integration design, manufacturing, packaging, and end-market applications to explore industry opportunities and challenges.

Session 4 Moderator / 主持人:
Jiye Yang  杨继业
Senior director, TD Integration Division I, HHGrace
华虹宏力集成一部总监
 
14:00-14:30
Device and packaging technologies for demanding high power applications
高功率应用对器件和封装技术的要求
Arnost Kopta
Head of BiMOS R&D, ABB Switzerland Ltd, Semiconductors
   
14:30-15:00
Status of Development and Mass Production for SiC Power Device
碳化硅功率器件的发展和大规模生产的现状
Hiroshi Kanazawa  金泽博
Marketing Unit Manager, Showa Denko K.K.
昭和电工
   
15:00-15:30
The Future of Power Devices and Implications for Semi Equipment
功率器件的未来和半导体制造设备的启示
Durga Chaturvedula
Managing Director, 200mm Product Mgmt. & Technology, Applied Materials
   
15:30-16:00
Demand, Status and Development Trend for Power Electronic Device
电力系统电力电子器件需求、现状及发展趋势
Yufeng Qiu  邱宇峰
Vice president, Global Energy Interconnection Research Institute
全球能源互联网研究院(国家电网下属单位),副院长
   
16:00-16:30
Thin Film Processes for Si, SiC and GaN Power Devices
硅、碳化硅和氮化镓功率器件的薄膜工艺
Hans Auer
Senior Product Marketing Manager, Evatec
   
16:30-17:00
Closing Keynote  闭幕演讲
Research of Power Semiconductor Devices with Novel Structures
新型结构晶体管及新一代功率芯片的研究
Pengfei Wang  王鹏飞
CTO, Oriental Semiconductor
东微半导体,首席技术官
   

Two-day registration fee:
Type Before Feb.20 with Advanced Payment(Early Bird) After Feb.20 and On-site
Attendees RMB 1,000 per person RMB 1,500 per person
Speakers Free Free
*Lunch is not included
*Agenda is subject to change

Developed From 

For more information and sponsorship, please contact:
Daniel Qi
Chief Analyst | Industry Research and Consulting
Director | Power and Compound Semiconductor Industry
Tel: 86-21-60278576
Email: fqi@semi.org


Sophia Huang
Program Specialist
Tel:86-21-60278553
Email: shuang@semi.org