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March 14-16,2018
Shanghai New International Expo Centre

China Memory Strategic Forum

China Memory Strategic Forum

Date: Friday, March 16, 2018
Venue: Pudong Ballroom 1+2+3, Kerry Hotel Pudong, Shanghai

Attendee Registration  Previous Review

According to IC-Insights' for 2017, DRAM market growth of 74%, 44% increase in the NAND flash market. Intel relinquished the top position to Samsung for the first time since 1993, Hynix and Micron will both jump a couple of spots in the top 10 list. Driven by market needs and policy support, 3 new Chinese Memory Companies are speeding up in process development. How shall the multi-national enterprises share the growth of China Memory market? How shall the new players enhance the R&D, and cooperate with global players? Industrial leaders will join the forum to share the insights.

     Agenda / 日程:

12:30-12:50 Registration 来宾登记
   
12:50-13:00
Moderator Introduces Speaker 主持人介绍出席嘉宾
Andrew Peng 彭安
CSO and Vice President of Business Development, Tong Fu Microeletronics Co., Ltd; Deputy to JEDEC Chairman
通富微电子有限公司首席策略官&业务发展副总经理,JEDEC副主席
   
13:00-13:30 Keynote Speech 主题演讲
Reserved for YMTC
Dr. Simon Yang 杨世宁博士
CEO of YMTC
长江存储总经理(TBD)
   
13:30-13:55 TBD
   
13:55-14:20 Scott Graham, VP (拟)
Vice President of Micron
   
14:20-14:45 Reserved for Lam Research
   
14:45-15:10
Equipment and Process Technologies Enabling Advanced Memory Devices
Kaitsuka Takanobu
先端半导体技术部部长,TEL
   
15:10-15:35 Technology Development in Memory Packaging
Dr. SW Yoon
StatsChipPAC / JCET
   
15:35-15:55 Zhiqiang Su 苏志强
Marketing strategic director, GigaDevice Semiconductor Inc.
北京兆易创新科技股份有限公司,战略市场总监
   
Agenda is subject to change 议程变化恕不另行通知