Symposium IV: Thin Film, Plating and Process Integration

Symposium Committee

Dr. Xiaoping Shi
Chair
Beijing Naura Microelectronics, China
   
Dr. Zhen Guo
Co-Chair
Microsoft, USA
   
Dr. Beichao Zhang
Co-Chair
VP of Hangzhou HFC, China
   
Dr. Chao Zhao
Co-Chair
Beijing Superstring Academy of Memory Technology (SAMT), China
   
Dr. Huang Liu
Co-Chair
Global Foundries, USA
   
Dr. Jiang Yan
Co-Chair
North China University of Technology, China
   
Dr. Ran LIU
Co-Chair
Fudan University, China
   
Prof. Yu-Long Jiang
Member
Fudan University, China
   
Dr. Li-Qun Xia
Member
Applied Materials, USA
   
Dr. Chih-Chao Yang
Member
IBM
   
Dr. Jianhua Ju
Member
HFC Semiconductor, China
   
Dr. Ganming Zhao
Member
Mattson
   
Dr. Zheyao Wang
Member
Tsinghua University, China
   
Dr. Larry Zhao
Member
Lam Research, USA
   
Dr. Jiaxiang Nie
Member
Leadmicro, China
   
Dr. Xun Gu
Member
ASM
   
Dr. Sean Chang
Member
PIOTECH
   
Dr. Heng Tao
Member
AMEC, China
   
Dr. Chenyu Wang
Member
Applied Materials, China
   

Symposium IV: Thin Film, Plating and Process Integration

  -  Thin film processes and Materials for semiconductor manufacturing, including (but not limited to) the following fields:
  •  Thin film processes and materials for high k gate dielectrics and metal gate processes, and related integration schemes
  •  Thin film processes and materials for straining engineering, including SiGe, SiC, stress liners and SMT
  •  Self-aligned silicides, Schottky barrier source/drain and advanced contact technologies
  •  Thin film processes and materials for high aspect ratio gap fill
  •  Silicon nanowire, carbon nanotube, graphene or other new materials for FET, metallization, dielectrics, contacts, strain and channels
  •  New 2D materials for future devices
  •  Plasma assisted material processes
  •  Electroplating and electroless deposition materials and processes

  -  Process integration, covering (but not limited to) the following fields:
  •  Key process module development and integration
  •  Strained silicon process and integration
  •  Cleaning technology for process integration
  •  Implantation and millisecond anneal
  •  Process integration for future transistors
  •  Innovative metrology for leading-edge integration
  •  Impacts of process integration on device reliability