Symposium I: Design Engineering and Memory Technology

Symposium I: Device Engineering and Memory Technology

Symposium Committee

Prof. Ru Huang Chair	Southeast University , China
Prof. Cor Claeys Co-Chair	KU Leuven, Belgium
Dr. Minhwa Chi Co-Chair	SiEn (Qingdao) Integrated Circuits Co., China
Prof. Qianqian Huang Co-Chair	Peking University, China
Prof.Gong Xiao Member	National University of Singapore
Prof. Ming He Member	Peking University, China
Dr. Zongliang Huo Member	Yangtze Memory Technology Co., Ltd
Prof. Mario Lanza Member	National University of Singapore
Prof. Han Li Member	Southeast Univeristy, China
Prof. Jun-wei Luo Member	Institute of Semiconductors, CAS
Dr. Wensheng Qian Member	HHGrace, China
Dr. Huiling Shang Member	TSMC
Prof. Xinran Wang Member	Nanjing University, China
Dr. Zhiqiang Wei Member	Avalanche Technology
Prof. Huaqiang Wu Member	Tsinghua University
Prof. Yuchao Yang Member	Peking University, China
Dr. Frank Bin Yang Member	Qualcomm, USA
Prof. Bin Yu Member	Zhejiang Univeristy, China
Dr. Lijie Zhang Member	Semiconductor Technology Innovation Center (Beijing) Corp.
Prof. Peng Zhou Member	Fudan Univeristy, China

Symposium I: Device Engineering and Memory Technology

  •  Advanced MOS devices
  •  Memory devices (DRAM, SRAM, Flash, emerging memory devices)
  •  Device reliability
  •  Mobility enhancement technology
  •  Shallow junction formation
  •  Source/drain engineering (silicide/salicide)
  •  RF/HV/Power devices
  •  Other emerging devices