Symposium III: Dry & Wet Etch and Cleaning
Symposium Committee
Symposium III: Dry & Wet Etch and Cleaning
• Advanced Patterning
- SADP, SAQP, LEn Patterning
- EUV single or double patterning
- Self-aligned patterning schemes
• Advanced FEOL etching
- Fin formation
- Replacement dummy gate stack etching for FinFET, tri-gate devices, Si nanowire, GAA, etc.
- Spacer etching
- CD/CDU and LER/LWR control
• Advanced interconnect etching, MOL/BEOL etching
- Contact, CA and self-aligned CA patterning and etching
- Etching of low-k dielectric materials
- Low-k and ultra low-k trench-via patterning, mask opening, CD, profile control, damage cleaning
- Self-aligned via (SAV) etching for metal hardmask dual-damascene scheme
- LWR control
• Etching challenges for advanced 193nm immersion lithography and advanced double exposures and double etching integrations
- Advanced photo resist trimming and etching
- Etching challenges for tri-layer mask integration schemes
• Interactions of plasma and other treatments with photoresists
- The fundamentals of surface interactions of plasmas and photoresists
- Advanced photoresist treatment for the enhancement of pattern transferring
• Plasma Processing for 3D Integration, TSV and MEMS/NMES
• Advanced memory etching and patterning
- Advanced memory materials
- DRAM and 3D NAND memory
- Advanced nonvolatile memory, such as MRAM, PCM, and other new memory devices
• Advanced plasma sources and process control
• Photo resist stripping and clean
• Post plasma treatment cleaning
• Wet etching and cleaning
Symposium Committee
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Dr. Ying Zhang Chair |
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Mr. Hai Cong Co-Chair |
Advanced Micro-Fabrication Equipment Inc. (AMEC), China |
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Mr. Jinrong Zhao Member |
Naura, China |
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Dr. Steven Zhang Member |
SMIC, China |
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Dr. Kaidong Xu Member |
Leuven Instruments, China |
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Dr. Huiyuan Pei Member |
Lam Research, China |
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Dr. Kevin Zhou Member |
Naura, China |
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Dr. Ying Xiao Member |
TEL, China |
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Dr. Ying Huang Member |
Micropolaris, China |
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Dr. Jianping Zhao Member |
TEL, USA |
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Dr. Yongyou (Clark) CAO Member |
Beijing Naura Microelectronics, China |
Symposium III: Dry & Wet Etch and Cleaning
• Advanced Patterning
- SADP, SAQP, LEn Patterning
- EUV single or double patterning
- Self-aligned patterning schemes
• Advanced FEOL etching
- Fin formation
- Replacement dummy gate stack etching for FinFET, tri-gate devices, Si nanowire, GAA, etc.
- Spacer etching
- CD/CDU and LER/LWR control
• Advanced interconnect etching, MOL/BEOL etching
- Contact, CA and self-aligned CA patterning and etching
- Etching of low-k dielectric materials
- Low-k and ultra low-k trench-via patterning, mask opening, CD, profile control, damage cleaning
- Self-aligned via (SAV) etching for metal hardmask dual-damascene scheme
- LWR control
• Etching challenges for advanced 193nm immersion lithography and advanced double exposures and double etching integrations
- Advanced photo resist trimming and etching
- Etching challenges for tri-layer mask integration schemes
• Interactions of plasma and other treatments with photoresists
- The fundamentals of surface interactions of plasmas and photoresists
- Advanced photoresist treatment for the enhancement of pattern transferring
• Plasma Processing for 3D Integration, TSV and MEMS/NMES
• Advanced memory etching and patterning
- Advanced memory materials
- DRAM and 3D NAND memory
- Advanced nonvolatile memory, such as MRAM, PCM, and other new memory devices
• Advanced plasma sources and process control
• Photo resist stripping and clean
• Post plasma treatment cleaning
• Wet etching and cleaning